4n38,4n38a(short) 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor 4n38(short),4n38a(short) ac line / digital logic isolator. digital logic / digital logic isolator. telephone line receiver. twisted pair line receiver. high frequency power supply feedback control. relay contact monitor. the toshiba 4n38 (short) through 4n38a (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. switching speeds: 3s (typ.) dc current transfer ratio: 100% (typ.) isolation resistance: 10 11 ? (min.) isolation voltage: 2500vrms (min.) ul recognized: ul1577, file no. e67349 pin configurations (top view) unit in mm toshiba 11 ? 7a8 weight: 0.4 g
4n38,4n38a(short) 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current (continuous) i f 80 ma forward current derating ? i f / c 1.07 (*) ma / c peak forward current (note 1) i pf 3 a power dissipation p d 150 mw power dissipation derating ? p d / c 2.0 (*) mw / c led reverse voltage v r 3 v collector emitter voltage bv ceo 80 v collector base voltage bv cbo 80 v emitter collector voltage bv eco 7 v collector current (continuous) i c 100 ma power dissipation p c 150 mw detector power dissipation derating ? p c / c 2.0 (*) mw / c storage temperature t stg 55~150 c operating temperature t opr 55~100 c lead soldering temperature (at 10 s) t sol 260 c total package power dissipation p t 250 mw coupled total package power dissipation derating ? p t / c 3.3 (*) mw / c (note 1) pulse width 300s, 2% duty cycle. (*) above 25 c ambient.
4n38,4n38a(short) 2002-09-25 3 electrical characteristics (ta = 25 ) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma D 1.15 1.5 v reverse current i r v r = 3 v D D 100 a led capacitance c d v = 0, f = 1 mhz D 30 D pf dc forward current gain h fe v ce = 5v, i c = 500 a D 200 D D collector emitter breakdown voltage v (br) ceo i c = 1 ma 80 D D v collector base breakdown voltage v (br) cbo i c = 100 a 80 D D v emitter collector breakdown voltage v (br) eco i e = 100 a 7 D D v collector dark current i ceo v ce = 60 v D 1 50 na collector dark current i cbo v cb = 60 v D 0.1 20 na detector collector emitter capacitance c ce v = 0, f = 1 mhz D 10 D pf current transfer ratio i c / i f i f = 10 ma, v ce = 10 v 10 100 D % collector emitter saturation voltage v ce (sat) i f = 20 ma, i c = 4 ma D D 1.0 v capacitance input to output c s v s = 0, f = 1 mhz D 0.8 D pf isolation resistance r s v s = 500 v, r.h. 60 % 10 11 D D ? bv s ac, 1 minute 2500 D D vrms 4n38 1500 D D 4n38a ac, peak 2500 D D vpk isolation voltage 4n38a bv s (*) ac, 1 second 1775 D D vrms turn on time t on D 3 D coupled turn off time t off v ce = 10 v, i c = 2 ma r l = 100 ? D 3 D s (*) jedec registered minimum bv s , however, toshiba specifies a minimum bv s of 2500 vrms, 1 minute.
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4n38,4n38a(short) 2002-09-25 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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